SIHG17N80AEF-GE3
Vishay Siliconix
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
$3.36
Available to order
Reference Price (USD)
1+
$3.36000
500+
$3.3264
1000+
$3.2928
1500+
$3.2592
2000+
$3.2256
2500+
$3.192
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SIHG17N80AEF-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SIHG17N80AEF-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SIHA21N65EF-GE3
onsemi
NVHL050N65S3HF
Renesas Electronics America Inc
RJK03B8DPA-00#J53
onsemi
FDT3N40TF
onsemi
JDX5008
IXYS
IXFK120N25P
Micro Commercial Co
SI2102-TP
Toshiba Semiconductor and Storage
TK5A65D(STA4,Q,M)
onsemi
FDD13AN06A0-F085
Renesas Electronics America Inc