SIHH240N60E-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 12A PPAK 8 X 8
$2.94
Available to order
Reference Price (USD)
1+
$2.94000
500+
$2.9106
1000+
$2.8812
1500+
$2.8518
2000+
$2.8224
2500+
$2.793
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHH240N60E-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIHH240N60E-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDD86250
Diodes Incorporated
DMTH6016LK3Q-13
Alpha & Omega Semiconductor Inc.
AOTF10N65
NXP USA Inc.
BUK9505-30A,127
Infineon Technologies
IRLL024NTRPBF
Diodes Incorporated
DMP68D0LFB-7B
IXYS
IXTX210P10T
Alpha & Omega Semiconductor Inc.
AOU3N50
Vishay Siliconix
SIHF35N60EF-GE3
onsemi