SIHP065N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 40A TO220AB
$7.61
Available to order
Reference Price (USD)
1+
$8.28000
10+
$7.48100
100+
$6.20220
500+
$5.24352
1,000+
$4.60443
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SIHP065N60E-GE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SIHP065N60E-GE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
NP40N055KHE-E1-AZ
Infineon Technologies
IPI80N04S404AKSA1
Infineon Technologies
IPZ40N04S5L2R8ATMA1
Panjit International Inc.
PJF4NA70_T0_00001
IXYS
IXFK360N15T2
onsemi
NVTFS005N04CTAG
onsemi
NTMS4700NR2
Nexperia USA Inc.
BUK9GTHP-55PJTR,51
Sanken
SKP253
Diodes Incorporated