SIHP22N60AE-BE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 600V
$3.93
Available to order
Reference Price (USD)
1+
$3.93000
500+
$3.8907
1000+
$3.8514
1500+
$3.8121
2000+
$3.7728
2500+
$3.7335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHP22N60AE-BE3 single MOSFET from Vishay Siliconix is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SIHP22N60AE-BE3 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIDR402EP-T1-RE3
onsemi
FDD86367-F085
Panjit International Inc.
PJQ2405-AU_R1_000A1
Infineon Technologies
IRLR2905TRPBF
Fairchild Semiconductor
HUFA76419S3S
STMicroelectronics
STB45N60DM2AG
Infineon Technologies
IRFP4368PBF
onsemi
NTTFS4928NTWG
Infineon Technologies
IPP086N10N3GXKSA1
Rohm Semiconductor