SIJH600E-T1-GE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 60-V (D-S) 175C MOSFET
$6.69
Available to order
Reference Price (USD)
1+
$6.69000
500+
$6.6231
1000+
$6.5562
1500+
$6.4893
2000+
$6.4224
2500+
$6.3555
Exquisite packaging
Discount
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The SIJH600E-T1-GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SIJH600E-T1-GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 373A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.92Ohm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: PowerPAK® 8 x 8
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