SIR812DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 60A PPAK SO-8
$0.00
Available to order
Reference Price (USD)
3,000+
$0.77080
6,000+
$0.73461
15,000+
$0.70876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIR812DP-T1-GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIR812DP-T1-GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10240 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Microsemi Corporation
APT8M80K
Infineon Technologies
AUIRLR024N
onsemi
FQD6N40CTF
Infineon Technologies
IRF540ZSTRL
Infineon Technologies
BSO301SPNTMA1
Renesas Electronics America Inc
RJL5014DPK-00#T0
Infineon Technologies
IPA60R330P6XKSA1
Nexperia USA Inc.
BUK9660-100A
onsemi
FDD86081-F085
Diodes Incorporated