SIS415DNT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 35A PPAK1212-8
$0.33
Available to order
Reference Price (USD)
3,000+
$0.33900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIS415DNT-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SIS415DNT-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 5460 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
Panjit International Inc.
PJQ5466A_R2_00001
onsemi
NTP5D0N15MC
Infineon Technologies
SPB80N06S2-08
IXYS
IXTA3N110
Alpha & Omega Semiconductor Inc.
AOSP21321
Infineon Technologies
SPW47N60CFDFKSA1
Infineon Technologies
IPLK80R1K2P7ATMA1
Toshiba Semiconductor and Storage
SSM6G18NU,LF
Fairchild Semiconductor
FQD60N03LTM
Rohm Semiconductor