SISH615ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 22.1A/35A PPAK
$0.62
Available to order
Reference Price (USD)
3,000+
$0.25425
6,000+
$0.23775
15,000+
$0.22950
30,000+
$0.22500
Exquisite packaging
Discount
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Enhance your electronic projects with the SISH615ADN-T1-GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SISH615ADN-T1-GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
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