SISS10ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 31.7A/109A PPAK
$0.69
Available to order
Reference Price (USD)
3,000+
$0.28171
6,000+
$0.26343
15,000+
$0.25429
30,000+
$0.24930
Exquisite packaging
Discount
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The SISS10ADN-T1-GE3 from Vishay Siliconix sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay Siliconix's SISS10ADN-T1-GE3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 109A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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