SISS60DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 50.1/181.8A PPAK
$0.72
Available to order
Reference Price (USD)
1+
$0.71775
500+
$0.7105725
1000+
$0.703395
1500+
$0.6962175
2000+
$0.68904
2500+
$0.6818625
Exquisite packaging
Discount
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Meet the SISS60DN-T1-GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SISS60DN-T1-GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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Vishay Siliconix