SKW30N60HS
Infineon Technologies
Infineon Technologies
IGBT, 41A, 600V, N-CHANNEL
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The SKW30N60HS Single IGBT transistor by Infineon Technologies is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SKW30N60HS ensures precise power control and long-term stability. With Infineon Technologies's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SKW30N60HS into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 41 A
- Current - Collector Pulsed (Icm): 112 A
- Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
- Power - Max: 250 W
- Switching Energy: 1.15mJ
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 20ns/250ns
- Test Condition: 400V, 30A, 11Ohm, 15V
- Reverse Recovery Time (trr): 125 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1
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