SM8S11-E3/2D
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 11VWM 20.1VC DO218AB
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuit protection with the SM8S11-E3/2D TVS diode from Vishay General Semiconductor - Diodes Division. This diode excels in clamping transient voltages and ensuring system integrity. TVS diodes are crucial in applications ranging from consumer electronics to military hardware. They provide robust defense against voltage surges, such as those caused by lightning or switching loads. For example, the SM8S11-E3/2D can protect military communication systems from transient interference. Vishay General Semiconductor - Diodes Division offers top-grade TVS diodes engineered for superior performance and reliability.
Specifications
- Product Status: Obsolete
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 11V
- Voltage - Breakdown (Min): 12.2V
- Voltage - Clamping (Max) @ Ipp: 20.1V
- Current - Peak Pulse (10/1000µs): 328A
- Power - Peak Pulse: 6600W (6.6kW)
- Power Line Protection: No
- Applications: General Purpose
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
Related Products
Vishay General Semiconductor - Diodes Division
SMCJ5.0-E3/9AT
Vishay General Semiconductor - Diodes Division
P4KA10HE3/54
onsemi
1N6280ARL4
Littelfuse Inc.
P4KE530C
Diodes Incorporated
SMAJ9.0A-13
Semtech Corporation
SMDA15C-5.TBT
Vishay General Semiconductor - Diodes Division
TA6F16AHM3/6B
Bourns Inc.
5.0SMDJ24A-QH
Vishay General Semiconductor - Diodes Division
SM5S13AHE3/2D
Microchip Technology