SMUN5133T1G-M02
onsemi
onsemi
SMUN5133 - DIGITAL BJT PNP - PRE
$0.09
Available to order
Reference Price (USD)
1+
$0.09422
500+
$0.0932778
1000+
$0.0923356
1500+
$0.0913934
2000+
$0.0904512
2500+
$0.089509
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineers choose SMUN5133T1G-M02 for its exceptional linearity in amplification circuits. onsemi's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 202 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70 (SOT323)
Related Products
Toshiba Semiconductor and Storage
TDTC143Z,LM
Toshiba Semiconductor and Storage
RN1313,LF
Diodes Incorporated
ADTA114EUAQ-7
Renesas Electronics America Inc
GN1L4M-T2-A
Renesas
GA4F3M(0)-T1-A
onsemi
MUN5133T1
Toshiba Semiconductor and Storage
TDTA124E,LM
Diodes Incorporated
ADTC124EUAQ-13
Rohm Semiconductor
DTB143EKFRAT146
onsemi