SP8J65TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET 2P-CH 30V 7A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.99820
Exquisite packaging
Discount
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Choose the SP8J65TB1 from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SP8J65TB1 stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
- Power - Max: 2W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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