SP8M3FU7TB1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N/P-CH 30V 8SOP
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Choose the SP8M3FU7TB1 from Rohm Semiconductor for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SP8M3FU7TB1 stands out for its reliability and efficiency. Rohm Semiconductor's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Obsolete
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 4.5A (Ta)
- Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V, 8.5nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V, 850pF @ 10V
- Power - Max: 2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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