SPB35N10
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 35A TO263-3
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Optimize your power electronics with the SPB35N10 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SPB35N10 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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