SPD30N03S2L20GBTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 30A TO252-3
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
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Optimize your power electronics with the SPD30N03S2L20GBTMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SPD30N03S2L20GBTMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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