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SPP80N06S08NK

Infineon Technologies
SPP80N06S08NK Preview
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3

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