SPP80P06PBKSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 60V 80A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SPP80P06PBKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SPP80P06PBKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 64A, 10V
- Vgs(th) (Max) @ Id: 4V @ 5.5mA
- Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5033 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 340W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB06N03LA
onsemi
FQPF5N50CTTU
Alpha & Omega Semiconductor Inc.
AON6405L_102
Nexperia USA Inc.
PMF250XNEAX
Infineon Technologies
IPD60R1K0CEATMA1
STMicroelectronics
STB21NM50N
STMicroelectronics
STB21NM60N
Vishay Siliconix
SI1411DH-T1-E3
Fairchild Semiconductor
SI3441DV
onsemi