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SPU04N60S5BKMA1

Infineon Technologies
SPU04N60S5BKMA1 Preview
Infineon Technologies
MOSFET N-CH 600V 4.5A TO251-3
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 50W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3-21
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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