SPW12N50C3
Infineon Technologies
Infineon Technologies
N-CHANNEL POWER MOSFET
$1.47
Available to order
Reference Price (USD)
1+
$1.47000
500+
$1.4553
1000+
$1.4406
1500+
$1.4259
2000+
$1.4112
2500+
$1.3965
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SPW12N50C3 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SPW12N50C3 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Related Products
Infineon Technologies
BSS138WH6327XTSA1
onsemi
FDB8443
Vishay Siliconix
SI7884BDP-T1-E3
Fairchild Semiconductor
FDB5645
Vishay Siliconix
IRLZ34PBF-BE3
onsemi
FCMT360N65S3
STMicroelectronics
STD70N10F4
Sanyo
2SB817D
onsemi
NTD4963NT4G
Vishay Siliconix