SPW35N60CFDFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 34.1A TO247-3
$12.90
Available to order
Reference Price (USD)
240+
$9.12629
Exquisite packaging
Discount
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Enhance your electronic projects with the SPW35N60CFDFKSA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's SPW35N60CFDFKSA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 34.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 118mOhm @ 21.6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1.9mA
- Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 313W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
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