SQ1470AEH-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 1.7A SOT363 SC70
$0.63
Available to order
Reference Price (USD)
3,000+
$0.19494
6,000+
$0.18306
15,000+
$0.17118
30,000+
$0.16286
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SQ1470AEH-T1_GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SQ1470AEH-T1_GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-70-6
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Fairchild Semiconductor
FQB65N06TM
IXYS
IXTY1N120P
Renesas Electronics America Inc
HAT1139H-EL-E
Infineon Technologies
IPW50R350CP
onsemi
FDPF12N60NZ
Rohm Semiconductor
SCT4026DRHRC15
onsemi
NTHS4111PT1
Wolfspeed, Inc.
C3M0065100J
Infineon Technologies
IRF60DM206
onsemi