SQ3461EV-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CHANNEL 12V 8A 6TSOP
$0.84
Available to order
Reference Price (USD)
3,000+
$0.28476
6,000+
$0.26628
15,000+
$0.25704
30,000+
$0.25200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQ3461EV-T1_GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SQ3461EV-T1_GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Alpha & Omega Semiconductor Inc.
AOTF3N90
Rohm Semiconductor
RQ5A030APTL
Vishay Siliconix
SUM80090E-GE3
onsemi
MTAJ3055EL
Infineon Technologies
IPA90R1K2C3XKSA2
Fairchild Semiconductor
FDS6680
Infineon Technologies
IPDD60R105CFD7XTMA1
NXP Semiconductors
PH3120L,115
Diodes Incorporated
DMN61D9UW-13
IXYS