SQD40N10-25-T4_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 40A TO252AA
$0.78
Available to order
Reference Price (USD)
1+
$0.78408
500+
$0.7762392
1000+
$0.7683984
1500+
$0.7605576
2000+
$0.7527168
2500+
$0.744876
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQD40N10-25-T4_GE3 by Vishay Siliconix is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the SQD40N10-25-T4_GE3 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
NXP USA Inc.
PH3530DL115
onsemi
STY30N50E
Vishay Siliconix
SIR846ADP-T1-RE3
Renesas Electronics America Inc
UPA2351T1G(2)-E4-A
Diodes Incorporated
DMP3028LPSQ-13
Alpha & Omega Semiconductor Inc.
AONS1R6A70
Renesas Electronics America Inc
NP90N04VLK-E1-AY
Diodes Incorporated
DMP6023LFG-7
Harris Corporation
RFP10N12L
Renesas Electronics America Inc