SQJ138ELP-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 40 V (D-S)
$1.62
Available to order
Reference Price (USD)
1+
$1.62000
500+
$1.6038
1000+
$1.5876
1500+
$1.5714
2000+
$1.5552
2500+
$1.539
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SQJ138ELP-T1_GE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SQJ138ELP-T1_GE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 315A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6685 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Renesas Electronics America Inc
2SK1288-AZ
Vishay Siliconix
SQD50N04-5M6L_GE3
Diodes Incorporated
DMT6012LFDF-7
Microchip Technology
2N7000-G
Vishay Siliconix
SIS862DN-T1-GE3
Vishay Siliconix
SI3493BDV-T1-E3
Fairchild Semiconductor
FDG329N
STMicroelectronics
STB34NM60N
IXYS
IXTT68P20T
EPC Space, LLC