SQJ403BEEP-T1_BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 30-V (D-S) 175C MOSFET
$1.68
Available to order
Reference Price (USD)
1+
$1.68000
500+
$1.6632
1000+
$1.6464
1500+
$1.6296
2000+
$1.6128
2500+
$1.596
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the SQJ403BEEP-T1_BE3 from Vishay Siliconix, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the SQJ403BEEP-T1_BE3 ensures reliable performance in demanding environments. Upgrade your circuit designs with Vishay Siliconix's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Diodes Incorporated
DMN3026LVT-7
Alpha & Omega Semiconductor Inc.
AONS36348
onsemi
NTTFS004N04CTAG
Vishay Siliconix
SI3483DDV-T1-GE3
Infineon Technologies
IPP16CN10NGHKSA1
STMicroelectronics
STL25N15F3
Nexperia USA Inc.
PSMN3R3-40MLHX
onsemi
NVF2201NT1G
Vishay Siliconix
SI2308BDS-T1-GE3
Vishay Siliconix