SQJQ184ER-T1_GE3
Vishay Siliconix
Vishay Siliconix
AUTOMOTIVE N-CHANNEL 80 V (D-S)
$3.85
Available to order
Reference Price (USD)
1+
$3.85000
500+
$3.8115
1000+
$3.773
1500+
$3.7345
2000+
$3.696
2500+
$3.6575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the SQJQ184ER-T1_GE3 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SQJQ184ER-T1_GE3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 16009 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerSMD, Gull Wing
Related Products
Vishay Siliconix
SI7456DDP-T1-GE3
IXYS
IXTX550N055T2
Nexperia USA Inc.
PSMN2R0-30YLE,115
onsemi
FDMS2734
Taiwan Semiconductor Corporation
TSM130NB06LCR RLG
IXYS
IXTH16P60P
onsemi
NTMD4184PFR2G
onsemi
NTMFS034N15MC
Microchip Technology
TN0106N3-G
STMicroelectronics