SQJQ906E-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK8X8
$2.80
Available to order
Reference Price (USD)
2,000+
$1.13169
6,000+
$1.09242
10,000+
$1.07100
Exquisite packaging
Discount
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Choose the SQJQ906E-T1_GE3 from Vishay Siliconix for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the SQJQ906E-T1_GE3 stands out for its reliability and efficiency. Vishay Siliconix's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Rds On (Max) @ Id, Vgs: 3.3mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 20V
- Power - Max: 50W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 8 x 8 Dual
- Supplier Device Package: PowerPAK® 8 x 8 Dual
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