SQM40020E_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 100A TO263
$2.56
Available to order
Reference Price (USD)
1+
$2.56000
500+
$2.5344
1000+
$2.5088
1500+
$2.4832
2000+
$2.4576
2500+
$2.432
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the SQM40020E_GE3 single MOSFET from Vishay Siliconix. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Vishay Siliconix's SQM40020E_GE3 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Vishay Siliconix
SIJ438DP-T1-GE3
Vishay Siliconix
SI4174DY-T1-GE3
Diodes Incorporated
ZXMP3F30FHTA
Infineon Technologies
IRF4905STRRPBF
IXYS
IXFA180N10T2
IXYS
IXTQ180N10T
Nexperia USA Inc.
PSMN008-75B,118
Infineon Technologies
BSC094N06LS5ATMA1
Infineon Technologies
IRFSL5615PBF
Alpha & Omega Semiconductor Inc.