SQS401EN-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 40V 16A PPAK1212-8
$0.00
Available to order
Reference Price (USD)
3,000+
$0.41697
6,000+
$0.38991
15,000+
$0.37638
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SQS401EN-T1_GE3 by Vishay Siliconix is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Vishay Siliconix for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.2 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1875 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8
- Package / Case: PowerPAK® 1212-8
Related Products
onsemi
NVD5490NLT4G
Vishay Siliconix
IRF9Z34
Diodes Incorporated
DMG9N65CTI
Infineon Technologies
IRF6648TR1PBF
STMicroelectronics
STP36NF06
Vishay Siliconix
SI4401DY-T1-E3
NXP USA Inc.
PHU66NQ03LT,127
Infineon Technologies
SPI07N65C3HKSA1
Alpha & Omega Semiconductor Inc.
AO4441L_001
Infineon Technologies