SQUN700E-T1_GE3
Vishay Siliconix
Vishay Siliconix
40-V N- & P-CH COMMON DRAIN + 20
$2.55
Available to order
Reference Price (USD)
1+
$2.55000
500+
$2.5245
1000+
$2.499
1500+
$2.4735
2000+
$2.448
2500+
$2.4225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Elevate your electronics with the SQUN700E-T1_GE3 from Vishay Siliconix, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the SQUN700E-T1_GE3 provides the reliability and efficiency you need. Vishay Siliconix's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 200V, 40V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc), 30A (Tc)
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA, 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
- Power - Max: 50W (Tc), 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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