SS10P3CHM3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 10A 30V TO277A
$0.44
Available to order
Reference Price (USD)
1,500+
$0.45293
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For engineers specializing in power electronics, the SS10P3CHM3_A/H by Vishay General Semiconductor - Diodes Division represents the pinnacle of rectifier diode array technology. Part of the essential Discrete Semiconductor Products lineup, this device features parallel diode configurations for increased current handling. Its applications span photovoltaic systems, UPS backups, and industrial automation controls. With Vishay General Semiconductor - Diodes Division's patented junction design, the SS10P3CHM3_A/H achieves superior heat dissipation and long-term stability under continuous load.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 5A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 550 µA @ 30 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
Related Products
Toshiba Semiconductor and Storage
HN1D01FE(TE85L,F)
Power Integrations
LQA40T200C
Comchip Technology
CDBD20200-G
GeneSiC Semiconductor
MURT20040R
Vishay General Semiconductor - Diodes Division
FEPB16GT-E3/45
Vishay General Semiconductor - Diodes Division
BYV32-200-E3/45
Power Integrations
LQA20N200C
Wolfspeed, Inc.
C4D30120D
Vishay General Semiconductor - Diodes Division
VS-C5PH3012L-N3
NXP USA Inc.