SS1H10HM3_B/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
1A 100V HIGH BARRIER SKY RECT. S
$0.11
Available to order
Reference Price (USD)
1+
$0.11369
500+
$0.1125531
1000+
$0.1114162
1500+
$0.1102793
2000+
$0.1091424
2500+
$0.1080055
Exquisite packaging
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The SS1H10HM3_B/I single rectifier diode by Vishay General Semiconductor - Diodes Division is a standout in the Diodes - Rectifiers - Single classification. Known for its robust construction and high rectification efficiency, it is perfect for demanding applications like electric vehicle charging stations and industrial robotics. Its low power dissipation and high thermal stability ensure optimal performance in data storage systems and server farms. The SS1H10HM3_B/I is also used in consumer gadgets, such as smartphones and tablets, highlighting its adaptability. Vishay General Semiconductor - Diodes Division's SS1H10HM3_B/I is the ultimate solution for high-performance rectification needs.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 770 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: 175°C (Max)
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