SS1H9HE3_B/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1A SMA
$0.12
Available to order
Reference Price (USD)
7,500+
$0.12816
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SS1H9HE3_B/I from Vishay General Semiconductor - Diodes Division is a premium single rectifier diode that stands out in the Diodes - Rectifiers - Single segment. With excellent thermal characteristics and high reverse voltage capability, it is perfect for high-frequency applications like RF modules and wireless charging systems. This diode is also widely used in automotive lighting and HVAC controls, ensuring efficient energy conversion. Vishay General Semiconductor - Diodes Division's dedication to quality means the SS1H9HE3_B/I meets rigorous standards, providing dependable performance for both commercial and industrial applications.
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 90 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 860 mV @ 2 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 µA @ 90 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: SMA (DO-214AC)
- Operating Temperature - Junction: 175°C (Max)
Related Products
Microchip Technology
MBR2060FCTE3/TU
Sanken
RM 1AV1
Microchip Technology
1N4942E3
Vishay General Semiconductor - Diodes Division
BYG24GHE3_A/H
Semtech Corporation
SM50
GeneSiC Semiconductor
1N3294A
IXYS
UGE0221AY4
Microchip Technology
1N4588D
Microchip Technology
R306100
Harris Corporation