SS8P4CHM3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 4A TO277A
$0.26
Available to order
Reference Price (USD)
6,500+
$0.26080
Exquisite packaging
Discount
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The SS8P4CHM3_A/I from Vishay General Semiconductor - Diodes Division sets new benchmarks in the Discrete Semiconductor Products market. This rectifier array incorporates advanced epitaxial growth technology for superior reverse recovery characteristics. Perfect for high-efficiency adapters, induction heating, and plasma cutting equipment, it offers outstanding thermal cycling performance. Vishay General Semiconductor - Diodes Division's rigorous quality control ensures the SS8P4CHM3_A/I maintains consistent parameters across production batches for design-in reliability.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io) (per Diode): 4A
- Voltage - Forward (Vf) (Max) @ If: 580 mV @ 4 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 300 µA @ 30 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-277, 3-PowerDFN
- Supplier Device Package: TO-277A (SMPC)
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