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SSM3J15F,LF

Toshiba Semiconductor and Storage
SSM3J15F,LF Preview
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 100MA S-MINI
$0.25
Available to order
Reference Price (USD)
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500+
$0.2475
1000+
$0.245
1500+
$0.2425
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$0.24
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$0.2375
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id: 1.7V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: S-Mini
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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