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SSM3K301T(TE85L,F)

Toshiba Semiconductor and Storage
SSM3K301T(TE85L,F) Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 3.5A TSM
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSM
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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