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SSM4K27CTTPL3

Toshiba Semiconductor and Storage
SSM4K27CTTPL3 Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA CST4
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
  • Rds On (Max) @ Id, Vgs: 205mOhm @ 250mA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: CST4 (1.2x0.8)
  • Package / Case: 4-SMD, No Lead

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