SSM6J214FE(TE85L,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 3.6A ES6
$0.41
Available to order
Reference Price (USD)
4,000+
$0.10560
8,000+
$0.09920
12,000+
$0.09280
28,000+
$0.08960
Exquisite packaging
Discount
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The SSM6J214FE(TE85L,F by Toshiba Semiconductor and Storage is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Toshiba Semiconductor and Storage for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
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