SSM6J216FE,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CHANNEL 12V 4.8A ES6
$0.51
Available to order
Reference Price (USD)
4,000+
$0.13200
8,000+
$0.12400
12,000+
$0.11600
28,000+
$0.11200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SSM6J216FE,LF single MOSFET from Toshiba Semiconductor and Storage. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SSM6J216FE,LF combines cutting-edge technology with Toshiba Semiconductor and Storage's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: ES6
- Package / Case: SOT-563, SOT-666
Related Products
NXP USA Inc.
BUK961R5-30E,118
Vishay Siliconix
SQ4182EY-T1_BE3
Texas Instruments
CSD18532KCS
IXYS
IXTP36N30P
Diodes Incorporated
BSS123Q-7
Nexperia USA Inc.
PMZ600UNEZ
onsemi
FQU10N20CTU
Vishay Siliconix
SQJ488EP-T2_BE3
IXYS
IXFN50N120SK
Infineon Technologies