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SSM6K204FE,LF

Toshiba Semiconductor and Storage
SSM6K204FE,LF Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 2A ES6
$0.16
Available to order
Reference Price (USD)
4,000+
$0.14520
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 126mOhm @ 1A, 4V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: ES6
  • Package / Case: SOT-563, SOT-666

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