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SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage
SSM6K411TU(TE85L,F Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 10A UF6
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UF6
  • Package / Case: 6-SMD, Flat Leads

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