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SSM6L820R,LXHF

Toshiba Semiconductor and Storage
SSM6L820R,LXHF Preview
Toshiba Semiconductor and Storage
AUTO AEC-Q SS MOS N-CH + P-CH LO
$0.60
Available to order
Reference Price (USD)
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$0.60000
500+
$0.594
1000+
$0.588
1500+
$0.582
2000+
$0.576
2500+
$0.57
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N and P-Channel
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
  • Power - Max: 1.4W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F

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