ST2310DHI
STMicroelectronics
STMicroelectronics
TRANS NPN 600V 12A ISOWATT-218
$0.00
Available to order
Reference Price (USD)
600+
$1.56188
Exquisite packaging
Discount
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Optimize your electronic systems with the ST2310DHI Bipolar Junction Transistor (BJT) from STMicroelectronics. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the ST2310DHI delivers superior performance in diverse environments. STMicroelectronics's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 1.75A, 7A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 7A, 5V
- Power - Max: 55 W
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ISOWATT-218-3
- Supplier Device Package: ISOWATT-218
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