STB12NM60N-1
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 10A I2PAK
$0.00
Available to order
Reference Price (USD)
1,000+
$2.07690
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the STB12NM60N-1 single MOSFET from STMicroelectronics. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust STMicroelectronics's STB12NM60N-1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Vishay Siliconix
IRL3102L
onsemi
FCPF360N65S3R0L
STMicroelectronics
STF15NM60ND
Nexperia USA Inc.
PH3030AL,115
Toshiba Semiconductor and Storage
2SJ360(F)
Infineon Technologies
IRF3707
onsemi
FQP90N10V2
onsemi
FQI9N15TU
Vishay Siliconix
IRL640STRL
Alpha & Omega Semiconductor Inc.