STB21NM50N-1
STMicroelectronics
STMicroelectronics
MOSFET N-CH 500V 18A I2PAK
$0.00
Available to order
Reference Price (USD)
1+
$6.62000
50+
$5.32120
100+
$4.84830
500+
$3.92590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the STB21NM50N-1 by STMicroelectronics, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The STB21NM50N-1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose STMicroelectronics.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 140W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
Alpha & Omega Semiconductor Inc.
AON6586
Fairchild Semiconductor
HUF75545P3_NL
Infineon Technologies
SPD30N03S2L-07
Infineon Technologies
IPP06N03LA
onsemi
NTD3055L104
Infineon Technologies
IPB80P03P4-05ATMA1
Infineon Technologies
IRLR3715TRPBF
onsemi
NTD3055-094-1G
Infineon Technologies
IPW90R500C3FKSA1
Rohm Semiconductor