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STB7NK80Z-1

STMicroelectronics
STB7NK80Z-1 Preview
STMicroelectronics
MOSFET N-CH 800V 5.2A I2PAK
$2.11
Available to order
Reference Price (USD)
1,000+
$1.59181
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2.6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1138 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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