Shopping cart

Subtotal: $0.00

STD11N60DM2

STMicroelectronics
STD11N60DM2 Preview
STMicroelectronics
MOSFET N-CH 650V 10A DPAK
$1.93
Available to order
Reference Price (USD)
2,500+
$0.85462
5,000+
$0.81658
12,500+
$0.78941
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 614 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products

Vishay Siliconix

IRFR9020TRLPBF

Vishay Siliconix

SQJA78EP-T1_GE3

STMicroelectronics

STL140N4F7AG

Rohm Semiconductor

RSJ400N06FRATL

Infineon Technologies

IPB029N06N3GATMA1

Taiwan Semiconductor Corporation

TSM900N06CW RPG

Rectron USA

RM150N60T2

Diodes Incorporated

DMPH4011SK3-13

Vishay Siliconix

SQD70140EL_GE3

Top