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STD11NM60N-1

STMicroelectronics
STD11NM60N-1 Preview
STMicroelectronics
MOSFET N-CH 600V 10A I-PAK
$0.00
Available to order
Reference Price (USD)
3,000+
$1.65186
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
  • Vgs (Max): ±25V
  • Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

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